 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK3649-01MR FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol VDS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Tch Tstg Viso *6 Ratings 150 120 33 132 30 33 169 20 5 2.16 53 +150 -55 to +150 2 Unit V V A A V A mJ kV/s kV/s W C C kVrms Equivalent circuit schematic Drain(D) Gate(G) Source(S) < *1 L=228H, Vcc=48V,Tch=25C, See to Avalanche Energy Graph *2 Tch=150C < < <150V *5 VGS=-30V *6 t=60sec, f=60Hz < *3 IF=-ID, -di/dt=50A/s, Vcc=BVDSS, Tch=150C *4 VDS = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID=250A VGS=0V ID= 250A VDS=VGS VDS=150V VGS=0V Tch=25C Tch=125C VDS=120V VGS=0V VGS=30V VDS=0V ID=11.5A VGS=10V ID=11.5A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=11.5A VGS=10V RGS=10 VCC=48V ID=23A VGS=10V L=228H Tch=25C IF=23A VGS=0V Tch=25C IF=23A VGS=0V -di/dt=100A/s Tch=25C Min. 150 3.0 Typ. Max. 5.0 25 250 100 70 1730 300 26 20 23 51 23 51 13.5 19 1.65 Units V V A nA m S pF 8 10 54 16 1150 200 17 13 15 34 15 34 9 12.5 33 1.10 130 0.6 ns nC A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 2.36 58.0 Units C/W C/W 1 2SK3649-01MR Characteristics FUJI POWER MOSFET 60 55 Allowable Power Dissipation PD=f(Tc) Typical Output Characteristics 50 ID=f(VDS):80s Pulse test,Tch=25C 20V 10V 8V 7.5V 50 45 40 40 7.0V PD [W] 30 25 20 ID [A] 35 30 6.5V 20 6.0V 15 10 10 5 0 0 25 50 75 100 125 150 VGS=5.5V 0 0 1 2 3 4 5 6 Tc [C] VDS [V] Typical Transfer Characteristic 100 Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 10 10 ID[A] 1 1 0.1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 gfs [S] 1 10 100 VGS[V] ID [A] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 0.30 VGS= 5.5V 6.0V 6.5V 7.0V 7.5V 200 180 160 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=11.5A,VGS=10V 0.25 0.20 RDS(on) [ m ] RDS(on) [ ] 140 120 100 80 typ. max. 0.15 0.10 8V 10V 60 40 0.05 20V 20 0.00 0 5 10 15 20 25 30 35 40 45 50 0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] 2 2SK3649-01MR FUJI POWER MOSFET 7.0 6.5 6.0 5.5 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 14 12 max. Typical Gate Charge Characteristics VGS=f(Qg):ID=23A, Tch=25C Vcc= 36V 48V 5.0 VGS(th) [V] 4.5 10 72V VGS [V] 75 100 125 150 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 min. 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 Tch [C] Qg [C] 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 Ciss 1n 10 C [F] Coss IF [A] 1 2 100p Crss 10p -1 10 10 0 10 1 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VDS [V] VSD [V] Typical Switching Characteristics vs. ID 10 3 t=f(ID):Vcc=48V, VGS=10V, RG=10 500 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V IAS=14A 400 10 2 td(off) 300 IAS=20A tf td(on) 1 EAS [mJ] t [ns] 200 IAS=33A 10 tr 100 10 0 0 -1 10 10 0 10 1 10 2 0 25 50 75 100 125 150 starting Tch [C] 3 2SK3649-01MR FUJI POWER MOSFET 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4 |
Price & Availability of 2SK3649-01MR
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |